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vishay siliconix sia519edj new product document number: 65176 s09-2685-rev. b, 14-dec-09 www.vishay.com 1 n- and p-channel 20-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfets ? typical esd protection: n-channel 2000 v p-channel 1900 v ? 100 % r g tested ? compliant to rohs directive 2002/95/ec applications ? load switch for portable devices ? dc/dc converters product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) n-channel 20 0.040 at v gs = 4.5 v 4.5 a 3.7 nc 0.065 at v gs = 2.5 v 4.5 a p-channel - 20 0.090 at v gs = - 4.5 v - 4.5 a 5.3 nc 0.137 at v gs = - 2.5 v - 4.5 a orderin g information: SIA519EDJ-T1-GE3 (lead (p b )-free and halogen-free) markin g code x x x e g x lot tracea b ility and date code part # code s 1 d 1 g 2 s 2 g 1 d 2 1 6 5 4 2 3 2.05 mm 2.05 mm powerpak ? sc-70-6 dual d 1 d 2 p-channel mosfet n -channel mosfet d 2 s 2 g 2 s 1 d 1 g 1 notes: a. package limited. b. surface mounted on 1" x 1" fr4 board. c. t = 5 s. d. see solder profile ( www.vishay.com/ppg?73257 ). the powerpak sc-70 is a leadless package. the end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. a solder fillet at the exposed copper tip cannot b e guaranteed and is not required to ensure adequate bottom side solder interconnection. e. rework conditions: manual soldering with a sol dering iron is not recommended for leadless components. f. maximum under steady state conditions is 110 c/w. absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol n-channel p-channel unit drain-source voltage v ds 20 - 20 v gate-source voltage v gs 12 continuous drain current (t j = 150 c) t c = 25 c i d 4.5 a - 4.5 a a t c = 70 c 4.5 a - 4.5 a t a = 25 c 4.5 a, b, c - 3.7 b, c t a = 70 c 4.4 b, c - 3 b, c pulsed drain current i dm 15 - 15 source drain current diode current t c = 25 c i s 4.5 a - 4.5 a t a = 25 c 1.6 b, c - 1.6 b, c maximum power dissipation t c = 25 c p d 7.8 7.8 w t c = 70 c 55 t a = 25 c 1.9 b, c 1.9 b, c t a = 70 c 1.2 b, c 1.2 b, c operating junction and storage temperature range t j , t stg - 55 to 150 c soldering recommendations (peak temperature) d, e 260 thermal resistance ratings parameter symbol n-channel p-channel unit typ. max. typ. max. maximum junction-to-ambient b, f t 5 s r thja 52 65 52 65 c/w maximum junction-to-case (drain) steady state r thjc 12.5 16 12.5 16
www.vishay.com 2 document number: 65176 s09-2685-rev. b, 14-dec-09 vishay siliconix sia519edj new product notes: a. guaranteed by design, not s ubject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a n-ch 20 v v gs = 0 v, i d = - 250 a p-ch - 20 v ds temperature coefficient v ds /t j i d = 250 a n-ch 23 mv/c i d = - 250 a p-ch - 11 v gs(th) temperature coefficient v gs(th) /t j i d = 250 a n-ch - 3.3 i d = - 250 a p-ch 2.6 gate threshold voltage v gs(th) v ds = v gs , i d = 250 a n-ch 0.6 1.4 v v ds = v gs , i d = - 250 a p-ch - 0.5 - 1.3 gate-body leakage i gss v ds = 0 v, v gs = 4.5 v n-ch 0.5 a p-ch 0.5 v ds = 0 v, v gs = 12 v n-ch 90 p-ch 8 zero gate voltage drain current i dss v ds = 20 v, v gs = 0 v n-ch 1 v ds = - 20 v, v gs = 0 v p-ch - 1 v ds = 20 v, v gs = 0 v, t j = 55 c n-ch 10 v ds = - 20 v, v gs = 0 v, t j = 55 c p-ch - 10 on-state drain current b i d(on) v ds 5 v, v gs = 4.5 v n-ch 10 a v ds - 5 v, v gs = - 4.5 v p-ch - 10 drain-source on-state resistance b r ds(on) v gs = 4.5 v, i d = 4.2 a n-ch 0.032 0.040 v gs = - 4.5 v, i d = - 2.9 a p-ch 0.074 0.090 v gs = 2.5 v, i d = 3.3 a n-ch 0.053 0.065 v gs = - 2.5 v, i d = - 2.3 a p-ch 0.113 0.137 forward transconductance b g fs v ds = 10 v, i d = 4.2 a n-ch 12 s v ds = - 10 v, i d = - 2.9 a p-ch 7 dynamic a input capacitance c iss n-channel v ds = 10 v, v gs = 0 v, f = 1 mhz p-channel v ds = - 10 v, v gs = 0 v, f = 1 mhz n-ch 350 pf p-ch 340 output capacitance c oss n-ch 82 p-ch 105 reverse transfer capacitance c rss n-ch 50 p-ch 95 total gate charge q g v ds = 10 v, v gs = 10 v, i d = 5.5 a n-ch 7.7 12 nc v ds = - 10 v, v gs = - 10 v, i d = - 3.7 a p-ch 10.5 16 n-channel v ds = 10 v, v gs = 4.5 v, i d = 5.5 a p-channel v ds = - 10 v, v gs = - 4.5 v, i d = - 3.7 a n-ch 3.7 6 p-ch 5.3 8 gate-source charge q gs n-ch 0.85 p-ch 0.75 gate-drain charge q gd n-ch 0.95 p-ch 2 gate resistance r g f = 1 mhz n-ch 0.7 3.5 7 p-ch 0.2 10 20
document number: 65176 s09-2685-rev. b, 14-dec-09 www.vishay.com 3 vishay siliconix sia519edj new product notes: a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2 %. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indi cated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended per iods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min. typ. max. unit dynamic a tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 10 v, r l = 2.3 i d ? 4.4 a, v gen = 4.5 v, r g = 1 p-channel v dd = - 10 v, r l = 3.3 i d ? - 3 a, v gen = - 4.5 v, r g = 1 n-ch 10 15 ns p-ch 20 30 rise time t r n-ch 12 20 p-ch 20 30 turn-off delay time t d(off) n-ch 21 35 p-ch 25 40 fall time t f n-ch 16 25 p-ch 10 15 tu r n - o n d e l ay t i m e t d(on) n-channel v dd = 10 v, r l = 2.3 i d ? 4.4 a, v gen = 10 v, r g = 1 p-channel v dd = - 10 v, r l = 3.3 i d ? - 3 a, v gen = - 10 v, r g = 1 n-ch 5 10 p-ch 5 10 rise time t r n-ch 10 15 p-ch 10 15 turn-off delay time t d(off) n-ch 15 25 p-ch 20 30 fall time t f n-ch 10 15 p-ch 10 15 drain-source body diode characteristics continuous source-drain diode current i s t c = 25 c n-ch 4.5 a p-ch - 4.5 pulse diode forward current a i sm n-ch 15 p-ch - 15 body diode voltage v sd i s = 4.4 a, v gs = 0 v n-ch 0.8 1.2 v i s = - 3 a, v gs = 0 v p-ch - 0.8 - 1.2 body diode reverse recovery time t rr n-channel i f = 4.4 a, di/dt = 100 a/s, t j = 25 c p-channel i f = - 3 a, di/dt = - 100 a/s, t j = 25 c n-ch 15 30 ns p-ch 26 50 body diode reverse recovery charge q rr n-ch 8 20 nc p-ch 13 25 reverse recovery fall time t a n-ch 8 ns p-ch 14 reverse recovery rise time t b n-ch 7 p-ch 12
www.vishay.com 4 document number: 65176 s09-2685-rev. b, 14-dec-09 vishay siliconix sia519edj new product n-channel typical characteristics 25 c, unless otherwise noted gate current vs. gate-source voltage output characteristics on-resistance vs. drain current and gate voltage 0 10 20 30 40 50 036912151 8 i gss at 25 c - gate c u rrent (ma) i gss v gs - gate-to-so u rce v oltage ( v ) 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5 v thr u 3 v v gs =2 v v gs =1.5 v v gs =2.5 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.00 0.02 0.04 0.06 0.0 8 0.10 0.12 03691215 v gs =2.5 v v gs =4.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) gate current vs. gate-source voltage transfer characteristics capacitance - gate c u rrent (a) i gss v gs - gate-to-so u rce v oltage ( v ) 0 3 6 9 12 15 1 8 10 -10 10 -9 10 - 8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 t j = 150 c t j = 25 c 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 100 200 300 400 500 0246 8 10 12 14 16 1 8 20 c iss c oss c rss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf)
document number: 65176 s09-2685-rev. b, 14-dec-09 www.vishay.com 5 vishay siliconix sia519edj new product n-channel typical characteristics 25 c, unless otherwise noted gate charge source-drain diode forward voltage threshold voltage 0 2 4 6 8 10 0246 8 v ds =16 v v ds =5 v i d =5.5a v ds =10 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs 0.1 1 10 100 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j = 150 c t j = 25 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage single pulse power (junction-to-ambient) 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 i d =4.2a v gs =4.5 v ,2.5 v t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) 0.00 0.02 0.04 0.06 0.0 8 0.10 0.12 012345 i d = 2 a; t j =25 c i d = 4.2 a; t j = 25 c i d =4.2a;t j = 125 c i d =2a;t j = 125 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 1000 100 1 0.001 0.01 0.1 10 po w er ( w ) p u lse (s) 20 10 5 15 0
www.vishay.com 6 document number: 65176 s09-2685-rev. b, 14-dec-09 vishay siliconix sia519edj new product n-channel typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 100 ms limited b yr ds(on) * b v dss limited 1ms 100 s 10 ms 1s,10s dc v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d current derating* 0 2 4 6 8 10 12 0 25 50 75 100 125 150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) power derating 0 2 4 6 8 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w )
document number: 65176 s09-2685-rev. b, 14-dec-09 www.vishay.com 7 vishay siliconix sia519edj new product n-channel typical characteristics 25 c, unless otherwise noted normalized thermal transient impedance, junction-to-ambient 1 0.1 0.01 normalized ef fective t ransient thermal impedance 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 square wave pulse duration (s) single pulse 0.02 0.05 0.1 0.2 duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r th ja = 85 c/w 3. t jm - t a = p dm z th ja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -1 10 -4 1 0.01 square wave pulse duration (s) normalized ef fective t ransient thermal impedance duty cycle = 0.5 0.2 0.1 single pulse 0.02 0.05
www.vishay.com 8 document number: 65176 s09-2685-rev. b, 14-dec-09 vishay siliconix sia519edj new product p-channel typical characteristics 25 c, unless otherwise noted gate current vs. gate-source voltage output characteristics on-resistance vs. drain current and gate voltage 0 1 2 3 4 036912151 8 i gss at 25 c - gate c u rrent (ma) i gss v gs - gate-to-so u rce v oltage ( v ) 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =5 v thr u 3.5 v v gs =1.5 v v gs =2 v v gs =2.5 v v gs =3 v v ds - drain-to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0 3 6 9 12 15 v gs =4.5 v v gs =2.5 v - on-resistance ( ) r ds(on) i d - drain c u rrent (a) gate current vs. gate-source voltage transfer characteristics capacitance - gate c u rrent (a) i gss v gs - gate-to-so u rce v oltage ( v ) 10 -10 10 -9 10 - 8 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 0 3 6 9 12 15 1 8 10 -11 10 -12 t j = 150 c t j = 25 c 0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 t c = 25 c t c = 125 c t c =- 55 c v gs - gate-to-so u rce v oltage ( v ) - drain c u rrent (a) i d c rss 0 200 400 600 8 00 036912 c iss c oss v ds - drain-to-so u rce v oltage ( v ) c - capacitance (pf)
document number: 65176 s09-2685-rev. b, 14-dec-09 www.vishay.com 9 vishay siliconix sia519edj new product p-channel typical characteristics 25 c, unless otherwise noted gate charge source-drain diode forward voltage threshold voltage 0 2 4 6 8 10 036912 i d =3.7a v ds =16 v v ds =10 v v ds =5 v - gate-to-so u rce v oltage ( v ) q g - total gate charge (nc) v gs 0.1 1 10 100 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1.4 t j = 150 c t j = 25 c v sd -so u rce-to-drain v oltage ( v ) - so u rce c u rrent (a) i s 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a ( v ) v gs(th) t j - temperat u re (c) on-resistance vs. junction temperature on-resistance vs. gate-to-source voltage single pulse power (junction-to-ambient) 0.6 0. 8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 i d =2.9a v gs =4.5 v v gs =2.5 v t j -j u nction temperat u re (c) ( n ormalized) - on-resistance r ds(on) 0.00 0.05 0.10 0.15 0.20 0.25 0.30 012345 i d = 1 a, t j = 25 c i d = 2.9 a, t j = 25 c i d =1a,t j = 125 c i d =2.9a,t j = 125 c - on-resistance ( ) r ds(on) v gs - gate-to-so u rce v oltage ( v ) 1000 100 1 0.001 0.01 0.1 10 po w er ( w ) p u lse (s) 20 10 5 15 0
www.vishay.com 10 document number: 65176 s09-2685-rev. b, 14-dec-09 vishay siliconix sia519edj new product p-channel typical characteristics 25 c, unless otherwise noted * the power dissipation p d is based on t j(max) = 150 c, using junction-to-case thermal resistanc e, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to deter mine the current rating, when this rating falls below the package limit. safe operating area, junction-to-ambient 100 1 0.1 1 10 100 0.01 10 0.1 t a = 25 c single p u lse 100 s limited b yr ds(on) * b v dss limited 1ms 10 ms 100 ms 1s,10s dc v ds - drain-to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d current derating* 0 2 4 6 8 10 0 255075100125150 package limited t c - case temperat u re (c) i d - drain c u rrent (a) power derating 0 2 4 6 8 25 50 75 100 125 150 t c - case temperat u re (c) po w er dissipation ( w )
document number: 65176 s09-2685-rev. b, 14-dec-09 www.vishay.com 11 vishay siliconix sia519edj new product p-channel typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?65176 . normalized thermal transient impedance, junction-to-ambient 1 0.1 0.01 normalized ef fective t ransient thermal impedance 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 square wave pulse duration (s) single pulse 0.02 0.05 0.1 0.2 duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r th ja = 110 c/w 3. t jm - t a = p dm z th ja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm normalized thermal transient impedance, junction-to-case 10 -3 10 -2 10 -1 10 -4 1 0.01 square wave pulse duration (s) normalized ef fective t ransient thermal impedance duty cycle = 0.5 0.2 0.1 single pulse 0.02 0.05
vishay siliconix package information document number: 73001 06-aug-07 www.vishay.com 1 powerpak ? sc70-6l dim single pad dual pad millimeters inches millimeters inches min nom max min nom max min nom max min nom max a 0.675 0.75 0.80 0.027 0.030 0.032 0.675 0.75 0.80 0.027 0.030 0.032 a1 0 - 0.05 0 - 0.002 0 - 0.05 0 - 0.002 b 0.23 0.30 0.38 0.009 0.012 0.015 0.23 0.30 0.38 0.009 0.012 0.015 c 0.15 0.20 0.25 0.006 0.008 0.010 0.15 0.20 0.25 0.006 0.008 0.010 d 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 d1 0.85 0.95 1.05 0.033 0.037 0.041 0.513 0.613 0.713 0.020 0.024 0.028 d2 0.135 0.235 0.335 0.005 0.009 0.013 e 1.98 2.05 2.15 0.078 0.081 0.085 1.98 2.05 2.15 0.078 0.081 0.085 e1 1.40 1.50 1.60 0.055 0.059 0.063 0.85 0.95 1.05 0.033 0.037 0.041 e2 0.345 0.395 0.445 0.014 0.016 0.018 e3 0.425 0.475 0.525 0.017 0.019 0.021 e 0.65 bsc 0.026 bsc 0.65 bsc 0.026 bsc k 0.275 typ 0.011 typ 0.275 typ 0.011 typ k1 0.400 typ 0.016 typ 0.320 typ 0.013 typ k2 0.240 typ 0.009 typ 0.252 typ 0.010 typ k3 0.225 typ 0.009 typ k4 0.355 typ 0.014 typ l 0.175 0.275 0.375 0.007 0.011 0.015 0.175 0.275 0.375 0.007 0.011 0.015 t 0.05 0.10 0.15 0.002 0.004 0.006 ecn: c-07431 ? rev. c, 06-aug-07 dwg: 5934 e2 back s ide view of s ingle back s ide view of dual note s : 1. all dimen s ion s a re in millimeter s 2. p a ck a ge o u tline excl us ive of mold fl as h a nd met a l bu rr 3 . p a ck a ge o u tline incl us ive of pl a ting pin1 pin6 pin5 pin4 pin2 pin 3 a z detail z z d e k1 k2 c a1 k 3 k2 k2 e b b e pin6 pin5 pin4 pin1 pin 3 pin2 e1 e1 e1 l l k4 k k k d1 d2 d1 d1 k1 e 3
application note 826 vishay siliconix www.vishay.com document number: 70487 12 revision: 21-jan-08 application note recommended pad layout for powerpak ? sc70-6l dual 1 2.500 (0.098) 0.350 (0.014) 2.275 (0.011) 0.613 (0.024) 0.300 (0.012) 0.325 (0.013) 0.950 (0.037) 0.475 (0.019) 2.500 (0.098) 0.275 (0.011) 0.160 (0.006) 1.600 (0.063) dimensions in mm/(inches) 0.650 (0.026) return to index
document number: 91 000 www.vishay.com revision: 11-mar-11 1 disclaimer legal disclaimer notice vishay all product, product specifications and data ar e subject to change without notice to improve reliability, function or design or otherwise. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectivel y, vishay), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicab le law, vishay disc laims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, incl uding without limitation specia l, consequential or incidental dama ges, and (iii) any and all impl ied warranties, including warran ties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of pro ducts for certain types of applications are based on vishays knowledge of typical requirements that are often placed on vishay products in gene ric applications. such statements are not binding statements about the suitability of products for a partic ular application. it is the customers responsibility to validate that a particu lar product with the properties described in th e product specification is su itable for use in a particul ar application. parameters provided in datasheets an d/or specifications may vary in different applications and perfo rmance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify vishays term s and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the vishay product co uld result in person al injury or death. customers using or selling vishay products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold vishay and it s distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay or its distributor was negligent regarding the design or manufact ure of the part. please contact authorized vishay personnel t o obtain written terms and conditions regarding products designed fo r such applications. no license, express or implied, by estoppel or otherwise, to any intelle ctual property rights is gran ted by this document or by any conduct of vishay. product names and markings noted herein may be trademarks of their respective owners.

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